Product Summary

The RJH30E2 is a silicon N channel IGBT.

Parametrics

RJH30E2 absolute maximum ratings: (1)Collector to emitter voltage VCES: 360 V; (2)Gate to emitter voltage VGES: ±30 V; (3)Collector current IC: 30 A; (4)Collector peak current ic(peak): 200 A; (5)Collector to emitter diode Forward peak current iDF(peak): 100 A; (6)Collector dissipation PC: 20 W; (7)Junction to case thermal impedance qj-c: 6.25 ℃/W; (8)Junction temperature Tj: 150 ℃; (9)Storage temperature Tstg: –55 to +150 ℃.

Features

RJH30E2 features: (1)Trench gate and thin wafer technology (G6H-II series); (2)High speed switching: tr =80 ns typ., tf = 150 ns typ.; (3)Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.; (4)Low leak current: ICES = 1 mA max.; (5)Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.; (6)Isolated package: TO-220FL.

Diagrams

STW18NK80Z block diagram